Volume 10, Issue 2 (6-2025)
J Res Dent Maxillofac Sci 2025, 10(2): 82-87 |
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Ethics code: IR.IAU.DENTAL.REC.1399.299
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Fazlyab M, Hosseini Z S, Vatanpour M, Rezaei F. Effect of 660 nm and 808 nm Low-Level Diode Laser Irradiation on Production of Vascular Endothelial Growth Factor by Human Gingival Fibroblasts: An in vitro Study. J Res Dent Maxillofac Sci 2025; 10 (2) :82-87
URL: http://jrdms.dentaliau.ac.ir/article-1-797-en.html
URL: http://jrdms.dentaliau.ac.ir/article-1-797-en.html
1- Department of Endodontics, TeMS.C., Islamic Azad University, Tehran, Iran
2- Private Dentist, Tehran, Iran.
3- Department of Endodontics, TeMS.C., Islamic Azad University, Tehran, Iran ,dr.fatemeh.rezaeii@gmail.com
2- Private Dentist, Tehran, Iran.
3- Department of Endodontics, TeMS.C., Islamic Azad University, Tehran, Iran ,
Abstract: (59 Views)
Background and Aim: This study aimed to assess the effect of 660 nm and 808 nm low-level diode laser irradiation on the production of vascular endothelial growth factor (VEGF) by human gingival fibroblasts (HGFs).
Materials and Methods: In this in vitro experimental study, HGFs were cultured in McCoy’s 5A modified medium and assigned to three groups of control, 660 nm laser irradiation, and 808 nm laser irradiation. The concentration of VEGF was measured in the three groups at 1, 3, and 7 days after the intervention using ELISA. The three groups were compared in this respect using repeated measures ANOVA. Statistical significance was defined as P<0.05.
Results: The concentration of VEGF in 808 nm laser group was significantly higher than that in the control and 660 nm laser groups (P<0.05). Also, the concentration of VEGF in 660 nm laser group was significantly higher than that in the control group (P<0.05). The concentration of VEGF at 7 days was significantly higher than that at 1 and 3 days, and the value at 3 days was significantly higher than that at 1 day in all three groups (P<0.05).
Conclusion: Within the limitations of this study, it appears that irradiation of 660 and 808 nm diode laser can increase the production of VEGF by HGFs.
Materials and Methods: In this in vitro experimental study, HGFs were cultured in McCoy’s 5A modified medium and assigned to three groups of control, 660 nm laser irradiation, and 808 nm laser irradiation. The concentration of VEGF was measured in the three groups at 1, 3, and 7 days after the intervention using ELISA. The three groups were compared in this respect using repeated measures ANOVA. Statistical significance was defined as P<0.05.
Results: The concentration of VEGF in 808 nm laser group was significantly higher than that in the control and 660 nm laser groups (P<0.05). Also, the concentration of VEGF in 660 nm laser group was significantly higher than that in the control group (P<0.05). The concentration of VEGF at 7 days was significantly higher than that at 1 and 3 days, and the value at 3 days was significantly higher than that at 1 day in all three groups (P<0.05).
Conclusion: Within the limitations of this study, it appears that irradiation of 660 and 808 nm diode laser can increase the production of VEGF by HGFs.
Type of Study: Original article |
Subject:
Endodontics
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